BL -HE-KTM1901 Hall sensor High performance, low power consumption, full pole Magnetic Resistance Sensor

BL -HE-KTM1901

The output of a linear Hall sensor is linearly related to the strength of the magnetic field, making the measurement results easier to understand and process. Because the Hall effect is used for measurement, the sensor does not need to be in direct contact with the measurement object, so it is non-contact.

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Model Number:BL -HE-KTM1901
Type:hall effect switch
Place of Origin:Guangdong, China
Brand Name:GBeelee
Use:Industrial electronics, consumer electronics
Theory:(TMR) technology and CMOS technology
Output:CMOS push-pull output
Supply voltage:1.8 V~5.5 V
Output low level:0.05-0.15V
Output high level:VDD-0.15
average current:160nA
Wake up state current:3.4uA
Sleep state current:148nA
Wake up time:40us
cycle:20ms
Description:Hall sensor

BL-HE-KTM1901 magnetoresistance is a magnetic switch sensor integrating tunnel magnetoresistance (TMR) technology and CMOS technology. It has the characteristics of high precision, high speed, low power consumption, high sensitivity, etc. It is suitable for the detection of magnetic field switches in industrial electronics, consumer electronics, etc. The internal circuit of the chip includes voltage generator, comparator, digital logic control module, threshold correction module and CMOS output circuit. BL-HE-KTM1901 magnetoresistance has a wide operating voltage range and a wide operating temperature range. This series of chips can provide a variety of magnetic field thresholds, switching operating frequencies and packaging forms to adapt to various applications.

Electrical parameters (@ TA=+25 ℃, VDD=3.0V, unless otherwise specified)
BL-HE-KTM1901SX series
Symbol	Parameter Description	Test Conditions	Min	Typ	Max	Units
VDD	Supply voltage	Operating	1.8	—	5.5	V
VOL	Output low level	IOUT=1mA	—	0.05	0.15	V
VOH	Output high level	IOUT=1mA	VDD-0.15	VDD-0.05	—	V
IDD(AVG)	average current	TA=+25℃, VDD=3.0V	—	160	—	nA
IDD(Awake)	Wake up state current	TA=+25℃, VDD=3.0V	—	3.4	—	μA
IDD(Sleep)	Sleep state current	TA=+25℃, VDD=3.0V	—	148		nA
TAWAKE	Wake up time	Operating	—	40	—	μs
TPERIOD	cycle	Operating	—	20	—	ms
BL-HE-KTM1901TX series
Symbol	Parameter Description	Test Conditions	Min	Typ	Max	Units
VDD	Supply voltage	Operating	1.8	—	5.5	V
VOL	Output low level	IOUT=1mA	—	0.02	0.1	V
VOH	Output high level	IOUT=1mA	VDD-0.1	VDD-0.02	—	V
IDD(AVG)	average current	TA=+25℃, VDD=3.0V	—	3.4	—	μA
FS	switching frequency	Operating	—	1000	—	Hz

1.Q:Can I get sample from you?

A:Yes,we can provide the free samples for your testing,please contact us for free and tell us which product you need.

2.Q:Do you accept customization?

A:Yes,customization is acceptable,please contact our sales staffs for consult.

3.Q:Can you provide help for technical issues?

A:Yes,we have more than 15 years of research and development in the electronic switch industry. If you need technical help in the purchase process, please feel free to contact us

4.Q:How many types of switches do you have,and what about your quality?

A:We have 10 different types of switches for your choice,all our products is passed the ROHS and REACH,please trust we definitely could meet your quality stander.

5.Q:What are the advantages of your photoelectric switch?

A:Our photoelectric switch is non-mechanical triggering makes the signal more stable and reliable,and precision built-in angle guide structure,high triggering angle consistency.

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