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what is scr silicon controlled rectifier

BL-SAN-L79L12 series of three-terminal negative regulators semiconductor SCR Silicon Controlled Rectifier

BL-SAN-L79L12
quality and reasonably priced scr silicon controlled rectifier online. Shop our most value-for-money switches, and enjoy exclusive discounts on scr silicon controlled rectifier.
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  • Type:semiconductor
  • Place of Origin:CN
  • Certification:RohS
  • Brand Name:Beelee
  • Model Number:BL-SAN-L79L12
  • Max. Current:0.5A
  • Max. Voltage:220VDC

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The BL-SAN-L79L00 series of three-terminal negative regulators employ internal current limiting and ther-mal shutdown, making them essentially indestruc-tible. If adequate heatsink is provided, they can deliver up to 100 mA output current. They are in-tended as fixed voltage regulators in a wide range of applications including local or oncard regulation for elimination of noise and distribution problems as-sociated with single-point regulation. In addition, they can be used with power pass elements to make high-current voltage regulators.

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01.The BL-SAN-L79L00 series used as Zener diode/resistor combination replacement, offers an effective output impedance improvement of typically two orders of magnetude, along with lower quiescent current and lower noise.

02.The SiC diode, available in TO-220AC and TO-247LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

03.Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

04.Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.


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SymboTest ConditionMin.Typ.Max.Unit
VoTj = 25℃-11.1-12-12.9V
VoIo = 1 to 40 mA Vi = -14.5 to -27 V
Io = 1 to 70 mA Vi = -19 V
-10.8
-10.8
---13.2
-13.2
V
V
VoVi = 14.5 to -27 V Tj = 25℃Vi = -16 to -27 V Tj = 25℃----250
200
mV
mV
VoIo = 1 to 100 mA Tj = 25℃
Io = 1 to 40 mA Tj = 25℃
----100
50
mV
mV
IdTj = 25℃
Tj = 125℃
----6.5
6
mA
mA
IdIo = 1 to 40 mA----0.2mA
IdVi = -16 to -27 V----1.5mA
eNB = 10Hz to 100KHz Tj = 25℃--80--µV
SVRIo = 40 mA f = 120 Hz
Tj = 25℃
Vi = -15 to -25 V
3642--dB
Vd--1.7--V

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